Honolulu – IMS 2017 – June 5, 2017 – At the InternaTIonal Microwave Symposium, June 4-9, NXP Semiconductors, the world's leading supplier of high power RF power transistors NV) (NASDAQ: NXPI), at booth #1132, demonstrates the new 5G cellular base station concept and a host of other innovative cellular infrastructure solutions and technologies. In addition, during the conference, NXP will also contribute a wealth of technical content by participating in eight seminars and paper presentations.
According to Paul Hart, Senior Vice President and General Manager of RF Business at NXP, “In terms of impact on society, 5G is likely to be the greatest technological innovation we witnessed for the foreseeable future, creating a connected world for the future. More than 60 years. Since then, NXP has been committed to innovation in this area. At this year's IMS conference, we will be honored to demonstrate our new GaN and silicon LDMOS products."
Building a 5G infrastructureWith the growing number of connected devices and smart applications, NXP offers a dedicated power amplifier (PA) solution designed to meet the 5G new wireless (NR) size, power and frequency requirements. The latest IHS Markit study shows that by 2035, 5G mobile technology is likely to achieve a global economic output of $12.4 trillion. Top cellular infrastructure OEMs have adopted NXP's RF high-performance cellular infrastructure products and technologies in their 5G NR product design. For more information on NXP's 5G product development, please visit Gradio.
Promoting the next generation of gallium nitride (GaN) technology to become mainstream from artWith the spectrum expansion in the high frequency band, we need more bandwidth to aggregate more carriers in different frequency bands, which accelerates the adoption of GaN technology in the field of base station radio. ABI research indicates that in 2017, GaN RF power devices are expected to account for nearly 25% of all high-power semiconductor products in mobile wireless infrastructure. With the adoption of the 5G NR standard, GaN technology is expected to be more widely used in the future.
NXP is committed to the successful deployment of the industry's best GaN technology. From 2015 to 2016, NXP's GaN RF transistor products more than doubled. NXP will continue to add GaN products in 2017, not only to better serve the cellular infrastructure market, but also to offer a full line of GaN products for different power ranges for the industrial and defense markets. For more information on NXP's GaN technology features, please visit RFGaN. At the IMS conference, NXP demonstrated the latest innovations in GaN technology at its booth.
NXP Airfast third-generation laterally diffused metal oxide semiconductor (LDMOS) productsRF Si-LDMOS products are still the most widely used in cellular base stations. With a significant market share, NXP has a leading position in the industry and has made significant progress in every generation of LDMOS product line. The latest generation of products delivers significant performance improvements, including efficiency, gain, thermal performance and signal bandwidth. These enhancements are designed to meet the requirements of next-generation macro base stations and intelligent mobility solutions for 5G. For more information on NXP's Airfast solutions, please visit Airfast.
NXP Small Base Station Solution Increases Coverage and CapacityIn addition to macro base stations, wireless carriers must also use small base stations for network densification, with the goal of increasing the coverage, capacity, and speed of next-generation networks. NXP offers small base station solutions that are highly integrated and small in size, enabling these system-level improvements. NXP offers a complete line of high power symmetrical ICs and asymmetric ICs ranging from 700 to 3800 MHz for 3G, 4G to 5G deployments. For more information on NXP's small base station solutions, please visit RFoutdoorsmallcell. NXP also works with industry partners such as Analog Devices Inc. and NanoSemi Inc. to provide complete linearization solutions. For information on test results and product demonstrations, visit RadioVerse or visit IMS booth #1032 or visit TIon-platform.
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