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Recently, the Belgian Research Center (IMEC) launched a joint development program (IIAP: industrial affiliation program) with the goal of reducing the cost of GaN technology, using large-diameter silicon-based nitriding (GaN-on-Si) ), and the development of high-efficiency, high-power white LEDs, dedicated to the development of nitriding technology, including power conversion and solid-state lighting (SSL) applications.

IMEC GaN project director Marianne Germain said that the use of large-diameter silicon chips (ranging from 100mm to 150mm to 200mm) combined with CMOS-compatible programs creates an economically viable solution. In terms of solid-state lighting, part of the IIAP program is the use of silicon-based nitriding technology to develop high-efficiency, high-power white LEDs. The goals of the program include improving internal and external quantum efficiencies and achieving high current operation.

According to IMEC, Group III nitrides have excellent luminescence properties and a wide range of visible and ultraviolet spectra. However, if new batch manufacturing technologies are used to develop LEDs with luminous efficacy of up to 150 lm/W, LEDs developed using these devices will be widely accepted.

IMEC will also invite integrated device manufacturers to join the compound semiconductor industry.

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